Low-power and High-speed SCFL-inverter Using Pseudomorphic InGaAs Channel High Electron Mobility Transistors

Pseudomorphic AlGaAs/InGaAs /GaAs High Electron Mobility Transistors with Super Low Noise Performances of 0.41 dB at 18 GHz

High-Speed Penternary Inverter Gate Using GNRFET

This paper introduces a new design of penternary inverter gate based on graphene nanoribbon field effect transistor (GNRFET). The penternary logic is one of Multiple-valued logic (MVL) circuits which are the best substitute for binary logic because of its low power-delay product (PDP) resulting from reduced complexity of interconnects and chip area. GNRFET is preferred over Si-MOSFET for circui...

Effect of Li Ion Irradiation on Reliability of AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistor

AlGaAs/InGaAs/GaAs pHEMT (pseudomorphic high electron mobility transistors) materials and devices have been studied with 20MeV Li ions irradiation at two different fluences. The structural and electrical characteristics have been studied and compared before and after the irradiation. It has been found that with the irradiation FWHM of the material not changes as confirmed with x-ray rocking cur...

Selective Oxidation on High-Indium-Content InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistors

Up to now, many efforts have been continuously channeled toward the development of oxidation techniques on the III-V compounds for GaAs-based device application, which include thermal oxidation [1-7], chemical anodization [8-12], photochemical oxidation [13-16], plasma oxidation [17-20], Ga2O3 grown by molecular beam epitaxy (MBE) [21-23], Al2O3 grown by atomic layer deposition (ALD) [24], oxid...

Effects of hydrostatic pressure and temperature on the AlGaN/GaN High electron mobility transistors

In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...